What is gallium nitride?
Gallium nitride is a wide-bandgap composite semiconductor material. According to the 3rd party'' s estimation, after utilizing GaN tools, the standard mobile phone charger can reduce weight by approximately 40% or output more power under the very same dimension conditions. It applies to consumer, commercial, automotive, as well as other digital products. The target applications of this collection include the integrated power supply of consumer electronic products, such as chargers, computer outside power adapters, LED lighting vehicle drivers, tvs, as well as various other home appliances.

Application prospect of gallium nitride
For GaN products, the density of heteroepitaxial issues is rather high since the solitary substrate crystal has actually not been resolved for a very long time, but the device degree has been functional. In 1994, Niya Chemical made 1200mcd LED; in 1995, it made Zcd blue light (450nmLED) and eco-friendly light 12cd (520nmLED); In 1998, Japan created a seven-year plan to establish LEDs making use of broad band void nitride products. The goal is to create high-energy ultraviolet LEDs secured in fluorescent tubes and also releasing white light by 2005. The power usage of this white LED is only 1/8 of that of incandescent lights as well as 1/2 of that of fluorescent lamps, and its life is 50-100 times that of conventional fluorescent lamps. This shows that the growth of GaN products has been rather effective as well as has entered the useful stage. The generation of InGaN system alloys, InGaN/AlGaN double junction LED, InGaN single quantum well LED, InGaN numerous quantum well LED, etc have been developed efficiently. InGaNSQWLED6cd high-brightness pure green tea and 2cd high-brightness blue LEDs have actually been produced. In the future, it can be achieved by incorporating with AlGaP as well as AlGaAs collection red LEDs to create an intense full-color display screen. In this method, the white source of light mixed with 3 primaries also opens brand-new application areas, and also the period identified by high reliability and also long-life LED will certainly come. LEDs will certainly change fluorescent lights as well as light bulbs. LED will certainly come to be the leading item. GaN transistors will certainly develop quickly with product development and also tool modern technology as well as become a new generation of high-temperature frequency as well as high-power gadgets.

Drawbacks as well as troubles of gallium nitride
On the one hand, theoretically, as a result of its power band structure, the reliable mass of the carrier is large, and also the transport residential or commercial property is poor, so the low electric field movement is low, as well as the high-frequency performance is bad. On the various other hand, GaN single crystals expanded by heteroepitaxy (utilizing sapphire as well as SiC as substrates) are not extremely satisfying (which impedes the advancement of GaN tools). For example, the misplacement thickness reaches 108 ~ 1010/cm2 (although the crystal structure of sapphire and also SiC resembles GaN, there are still reasonably large latticework inequality as well as thermal inequality); The background carrier (electron) concentration of undoped GaN at space temperature is as high as 1017cm-3 (potentially related to N openings, substitutional Si, substitutional O, and so on), and also reveals n-type conductivity; Although it is easy to attain n-type doping (doping Si can obtain n-type GaN with electron focus of 1015 ~ 1020/cm3 as well as room temperature level movement > 300 cm2/V. s), the p-type doping level is too low (primarily doped with Mg), the resulting opening concentration is only 1017 ~ 1018/cm3, wheelchair

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